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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHT84SPT CURRENT 0.13 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High density cell design for low RDS(ON). * Suitable for high packing density. * * * * Rugged and reliable. High saturation current capability. Voltage controlled small signal switch. Internal isolated two P-Channel FET in one package. 1.2~1.4 (3) SC-88/SOT-363 (1) (6) 0.65 0.65 2.0~2.2 CONSTRUCTION * P-Channel Enhancement 0.15~0.35 (4) 1.15~1.35 MARKING * VS 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-88/SOT-363 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHT84SPT Units VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage - Continuous 20 -0.13 V ID Maximum Drain Current - Continuous A PD Maximum Power Dissipation 300 -55 to 150 mW TJ,TSTG Operating and Storage Temperature Range C Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 417 C/W 2004-03 RATING CHARACTERISTIC CURVES ( CHT84SPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V -50 -75 -15 -100 10 -10 V A nA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 1.0 mA -0.8 -1.6 6 -2.0 10 V Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A Forward Transconductance VDS = -25 V , ID = 100 m A 0.05 S DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = -25 V, VGS = 0 V, f = 1.0 MHz 45 25 12 10 18 pF VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 nS RATING CHARACTERISTIC CURVES ( CHT84SPT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 600 15 Figure 2. On-Resistance Variation with Temperature I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 500 R DS(ON) , NORMALIZED VGS = 5V 400 12 4.5V 9.0 V GS =-10V I D = -130m A 300 200 3.5V 3.0V 6.0 100 3.0 2.5V 0 0 1 2 3 4 5 V DS , DRAIN-SOURCE VOLTAGE (V) 0 -5 0 -2 5 0 25 50 75 100 T J , JUNCTION T EMPERATURE (C) 125 150 |
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